GOFORD · FETs & Power MOSFETs · MPN G2K3N10L6
No reviews yet — be the first to review GOFORD G2K3N10L6.
| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 103pF |
| Configuration | - |
| Current - Continuous Drain(Id) | 3A |
| Pd - Power Dissipation | 1.67W |
| RDS(on) | 180mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 536pF |
3A 1.67W 180mΩ@10V 1.6V 2 N-Channel SOT-23-6L FET, MOSFET Arrays RoHS