GOFORD · FETs & Power MOSFETs · MPN G2K3N10H
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| Gate Charge(Qg) | 13nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 11pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 434pF |
| Vgs | ±20V |
100V 2A 1.5V 2.4W 190mΩ@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS