GOFORD · FETs & Power MOSFETs · MPN G2K2P10S2E
No reviews yet — be the first to review GOFORD G2K2P10S2E.
| Current - Continuous Drain(Id) | 3.5A |
|---|---|
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 170mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Drain to Source Voltage | 100V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.623nF |
| Gate Charge(Qg) | 23nC |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
P-Channel 100V 3.5A 3.1W Surface Mount SOP-8