GOFORD · FETs & Power MOSFETs · MPN G2K2P10D3E
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| Gate Charge(Qg) | 33nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 45pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 31W |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| RDS(on) | 175mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.668nF |
| Vgs | ±20V |
P-Channel 100V 10A 31W Surface Mount DFN3x3-8L