GOFORD · FETs & Power MOSFETs · MPN G29
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| Gate Charge(Qg) | 7.8nC |
|---|---|
| Drain to Source Voltage | 15V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 4.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 550mV |
| Pd - Power Dissipation | 1.05W |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| RDS(on) | 24mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 740pF |
| Vgs | ±12V |
P-Channel 15V 4.1A 1.05W Surface Mount SOT-23