GOFORD · FETs & Power MOSFETs · MPN G28N02T
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 42nC |
| Output Capacitance(Coss) | 420pF |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| RDS(on) | 6.7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Vgs | ±12V |
20V 28A 650mV 2.5W 6.7mΩ@4.5V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS