GOFORD G26P04K

GOFORD · FETs & Power MOSFETs · MPN G26P04K

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Specifications

Gate Charge(Qg)42nC
Drain to Source Voltage40V
Output Capacitance(Coss)212pF
Current - Continuous Drain(Id)26A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)203pF
RDS(on)13mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.849nF
Vgs±20V

Technical details

P-Channel 40V 26A 78W Surface Mount TO-252

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