GOFORD G26P04D5

GOFORD · FETs & Power MOSFETs · MPN G26P04D5

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Specifications

Gate Charge(Qg)45nC
Drain to Source Voltage40V
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)26A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)14mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.5nF
Vgs±20V

Technical details

P-Channel 40V 26A 50W Surface Mount DFN-8L(5x6)

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