GOFORD G26N02K

GOFORD · FETs & Power MOSFETs · MPN G26N02K

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Specifications

Gate Charge(Qg)26nC
Drain to Source Voltage20V
Output Capacitance(Coss)164pF
Current - Continuous Drain(Id)26A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)777pF
Vgs±12V

Technical details

N-Channel 20V 26A 33W Surface Mount TO-252

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