GOFORD G25KN06IE

GOFORD · FETs & Power MOSFETs · MPN G25KN06IE

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Specifications

Gate Charge(Qg)1.22nC
Drain to Source Voltage60V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation300mW
RDS(on)1.8Ω@10V
Reverse Transfer Capacitance (Crss@Vds)3pF
Number1 N-channel
Input Capacitance(Ciss)19pF
Vgs±20V

Technical details

N-Channel 60V 300mA 300mW Surface Mount SOT-23

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