GOFORD G250N03IE

GOFORD · FETs & Power MOSFETs · MPN G250N03IE

No reviews yet — be the first to review GOFORD G250N03IE.

Specifications

Gate Charge(Qg)14nC
Drain to Source Voltage30V
Output Capacitance(Coss)66pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)56pF
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)573pF
Vgs±10V

Technical details

N-Channel 30V 5.3A 1.4W Surface Mount SOT-23

Related FETs & Power MOSFETs