GOFORD G250N03D2E

GOFORD · FETs & Power MOSFETs · MPN G250N03D2E

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Specifications

Current - Continuous Drain(Id)7.5A
Pd - Power Dissipation1.9W
RDS(on)21mΩ@10V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)56pF
Number1 N-channel
Input Capacitance(Ciss)573pF
Gate Charge(Qg)14nC
Vgs±10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel 30V 7.5A Surface Mount DFN2x2-6L

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