GOFORD G2324

GOFORD · FETs & Power MOSFETs · MPN G2324

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Specifications

Gate Charge(Qg)10nC
Drain to Source Voltage100V
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)215mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)535pF
Vgs±20V

Technical details

N-Channel 100V 8A 1.3W Surface Mount SOT-23

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