GOFORD G2312

GOFORD · FETs & Power MOSFETs · MPN G2312

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Specifications

Gate Charge(Qg)10.5nC
Drain to Source Voltage20V
Output Capacitance(Coss)132pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)119pF
RDS(on)13mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)830pF
Vgs±12V

Technical details

N-Channel 20V 5A 1.25W Surface Mount SOT-23

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