GOFORD G230P06T

GOFORD · FETs & Power MOSFETs · MPN G230P06T

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Specifications

Gate Charge(Qg)62nC
Drain to Source Voltage60V
Output Capacitance(Coss)241pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)18mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.499nF
Vgs±20V

Technical details

P-Channel 60V 60A 115W Through Hole TO-220

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