GOFORD G230P06M

GOFORD · FETs & Power MOSFETs · MPN G230P06M

No reviews yet — be the first to review GOFORD G230P06M.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)62nC
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)48A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation105W
RDS(on)18mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)238pF
Number1 P-Channel
Input Capacitance(Ciss)4.505nF
Vgs±20V

Technical details

P-Channel 60V 48A 105W Surface Mount TO-263

Related FETs & Power MOSFETs