GOFORD G2305

GOFORD · FETs & Power MOSFETs · MPN G2305

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Specifications

Gate Charge(Qg)12nC
Drain to Source Voltage20V
Output Capacitance(Coss)128pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)116pF
RDS(on)29mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.05nF
Vgs±12V

Technical details

P-Channel 20V 4.8A 1.7W Surface Mount SOT-23

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