GOFORD G220P03S2

GOFORD · FETs & Power MOSFETs · MPN G220P03S2

No reviews yet — be the first to review GOFORD G220P03S2.

Specifications

Current - Continuous Drain(Id)9A
Pd - Power Dissipation2.7W
RDS(on)17mΩ@10V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)160pF
Number2 P-Channel
Input Capacitance(Ciss)1.277nF
Gate Charge(Qg)24.5nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 9A 2.7W Surface Mount SOP-8

Related FETs & Power MOSFETs