GOFORD G20P10KE

GOFORD · FETs & Power MOSFETs · MPN G20P10KE

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Specifications

Gate Charge(Qg)70nC
Drain to Source Voltage100V
Output Capacitance(Coss)89pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)87pF
RDS(on)94mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.354nF
Vgs±20V

Technical details

P-Channel 100V 20A 69W Surface Mount TO-252

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