GOFORD G20P08K

GOFORD · FETs & Power MOSFETs · MPN G20P08K

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Specifications

Gate Charge(Qg)48nC
Drain to Source Voltage80V
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)285pF
RDS(on)52mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.5nF
Vgs±20V

Technical details

P-Channel 80V 20A 60W Surface Mount TO-252

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