GOFORD G20N06D52

GOFORD · FETs & Power MOSFETs · MPN G20N06D52

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Specifications

Current - Continuous Drain(Id)20A
Pd - Power Dissipation48W
RDS(on)26mΩ@10V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)51pF
Number2 N-Channel
Input Capacitance(Ciss)1.326nF
Gate Charge(Qg)25nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 20A 45W Surface Mount DFN5x6-8L

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