GOFORD G20N03K

GOFORD · FETs & Power MOSFETs · MPN G20N03K

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Specifications

Gate Charge(Qg)18nC
Drain to Source Voltage30V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation33W
RDS(on)12mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)94pF
Number1 N-channel
Input Capacitance(Ciss)923pF
Vgs±20V

Technical details

N-Channel 30V 30A 33W Surface Mount TO-252

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