GOFORD G20N03D2

GOFORD · FETs & Power MOSFETs · MPN G20N03D2

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)20nC
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)12.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)860pF
Vgs±20V

Technical details

N-Channel 30V 9A 2.1W Surface Mount DFN2x2-6L

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