GOFORD G2014

GOFORD · FETs & Power MOSFETs · MPN G2014

No reviews yet — be the first to review GOFORD G2014.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)24nC
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)7.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.6nF
Vgs±12V

Technical details

N-Channel 20V 14A 3W Surface Mount DFN2x2-6L

Related FETs & Power MOSFETs