GOFORD · FETs & Power MOSFETs · MPN G2012
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| Gate Charge(Qg) | 18nC |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 245pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 235pF |
| RDS(on) | 6.6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.12nF |
| Vgs | ±12V |
N-Channel 20V 12A 1.5W Surface Mount DFN2x2-6L