GOFORD G200P04S2

GOFORD · FETs & Power MOSFETs · MPN G200P04S2

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Specifications

Current - Continuous Drain(Id)9A
RDS(on)16mΩ@10V
Pd - Power Dissipation2.1W
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage40V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)208pF
Number2 P-Channel
Input Capacitance(Ciss)2.365nF
Gate Charge(Qg)42nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 40V 9A 2.1W Surface Mount SOP-8

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