GOFORD G200P04D3

GOFORD · FETs & Power MOSFETs · MPN G200P04D3

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Specifications

Gate Charge(Qg)54nC
Drain to Source Voltage40V
Output Capacitance(Coss)222pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)211pF
RDS(on)13mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.662nF
Vgs±20V

Technical details

P-Channel 40V 20A 30W Surface Mount DFN3x3-8L

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