GOFORD · FETs & Power MOSFETs · MPN G200N06TH
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| Gate Charge(Qg) | 45nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 60W |
| RDS(on) | 11mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.85nF |
| Vgs | ±20V |
N-Channel 60V 55A 60W Through Hole TO-220