GOFORD G200N06K

GOFORD · FETs & Power MOSFETs · MPN G200N06K

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)26nC
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.2V
Pd - Power Dissipation70W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)105pF
Number1 N-channel
Input Capacitance(Ciss)1.85nF
Vgs±20V

Technical details

MOSFET N-Channel 60V 55A Surface Mount TO-252

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