GOFORD G200N03S2

GOFORD · FETs & Power MOSFETs · MPN G200N03S2

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Specifications

Current - Continuous Drain(Id)7A
RDS(on)16mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))1.6V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)60pF
Number2 N-Channel
Input Capacitance(Ciss)500pF
Gate Charge(Qg)9.5nC
Vgs±20V
Operating Temperature-55℃~+150℃

Technical details

N-Channel 30V 7A 2W Surface Mount SOP-8-Dual

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