GOFORD G2003A

GOFORD · FETs & Power MOSFETs · MPN G2003A

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Specifications

Gate Charge(Qg)12nC
Drain to Source Voltage190V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)430mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)580pF
Vgs±20V

Technical details

190V 3A 1.8W Surface Mount SOT-23-3L

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