GOFORD · FETs & Power MOSFETs · MPN G1NP02LLE
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| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 108pF;109pF |
| Current - Continuous Drain(Id) | 1.3A;1.1A |
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 175mΩ@4.5V;410mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 700mV;600mV |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF;51pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 146pF;177pF |
| Gate Charge(Qg) | 1nC;1.22nC |
N-Channel+P-Channel Array 20V 1.3A 1.1A 1.25W Surface Mount SOT-23-6L