GOFORD · FETs & Power MOSFETs · MPN G1NP02ELL
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| Gate Charge(Qg) | 750pC;855pC |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 15pF;17pF |
| Current - Continuous Drain(Id) | 1.36A;1.15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 550mV |
| Pd - Power Dissipation | 1.12W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF;5.7pF |
| RDS(on) | 159mΩ@4.5V;375mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 60pF;68.4pF |
| Vgs | ±10V |
20V 550mV 1.12W 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOT-23-6 Single FETs, MOSFETs RoHS