GOFORD · FETs & Power MOSFETs · MPN G1N60J
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| Gate Charge(Qg) | 5nC |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 17W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF |
| RDS(on) | 8.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 135pF |
| Vgs | ±30V |
N-Channel 600V 1A 17W Through Hole TO-251