GOFORD · FETs & Power MOSFETs · MPN G1K8P06S2
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| Current - Continuous Drain(Id) | 3.2A |
|---|---|
| Pd - Power Dissipation | 2W |
| RDS(on) | 140mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Drain to Source Voltage | 60V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 594pF |
| Gate Charge(Qg) | 11.3nC |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
P-Channel 60V 3.2A 2W Surface Mount SOP-8