GOFORD G1K6P15K

GOFORD · FETs & Power MOSFETs · MPN G1K6P15K

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Specifications

Gate Charge(Qg)22nC
Drain to Source Voltage150V
Output Capacitance(Coss)84pF
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)57pF
RDS(on)132mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.986nF
Vgs±20V

Technical details

P-Channel 150V 24A Surface Mount TO-252

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