GOFORD · FETs & Power MOSFETs · MPN G1K3N10LL
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| Gate Charge(Qg) | 22nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 29pF |
| Current - Continuous Drain(Id) | 3.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 2.28W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 100mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 808pF |
| Vgs | ±20V |
N-Channel 100V 3.4A 2.28W Surface Mount SOT-23-6L