GOFORD · FETs & Power MOSFETs · MPN G1K3N10GH
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| Gate Charge(Qg) | 20nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 5A |
| Output Capacitance(Coss) | 25pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 110mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 644pF |
| Vgs | ±20V |
N-Channel 100V 5A 1.5W Surface Mount SOT-89