GOFORD · FETs & Power MOSFETs · MPN G1K2C10S2
No reviews yet — be the first to review GOFORD G1K2C10S2.
| Current - Continuous Drain(Id) | 3A;3.5A |
|---|---|
| Pd - Power Dissipation | 2W;3.1W |
| RDS(on) | 110mΩ@10V;165mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V;1.8V |
| Drain to Source Voltage | 100V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF;43pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 670pF;1.7nF |
| Gate Charge(Qg) | 22nC;32nC |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 100V 3A 3.5A 2W 3.1W Surface Mount SOP-8