GOFORD · FETs & Power MOSFETs · MPN G1K1P10TE
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| Gate Charge(Qg) | 70nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 91pF |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 88W |
| RDS(on) | 94mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.3nF |
| Vgs | ±20V |
P-Channel 100V 24A 88W Through Hole TO-220