GOFORD · FETs & Power MOSFETs · MPN G1K1P06SH
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 16nC |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 40pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 83mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1nF |
| Vgs | ±20V |
P-Channel 60V 4A Surface Mount SOP-8