GOFORD · FETs & Power MOSFETs · MPN G1K1P06HH
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| Gate Charge(Qg) | 11nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 45pF |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 90mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 981pF |
| Vgs | ±20V |
P-Channel 60V 4.5A 3.1W Surface Mount SOT-223