GOFORD G18P03S

GOFORD · FETs & Power MOSFETs · MPN G18P03S

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Specifications

Gate Charge(Qg)58nC
Drain to Source Voltage30V
Output Capacitance(Coss)435pF
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)175pF
RDS(on)8.1mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.57nF
Vgs±20V

Technical details

P-Channel 30V 15A 3.1W Surface Mount SOP-8

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