GOFORD G18P03D3

GOFORD · FETs & Power MOSFETs · MPN G18P03D3

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Specifications

Gate Charge(Qg)45nC
Drain to Source Voltage30V
Output Capacitance(Coss)518pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)455pF
RDS(on)7.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.074nF
Vgs±20V

Technical details

P-Channel 30V 28A 42W Surface Mount DFN3x3-8L

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