GOFORD · FETs & Power MOSFETs · MPN G18NP06Y
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| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 135pF;201pF |
| Current - Continuous Drain(Id) | 18A |
| RDS(on) | 26mΩ@10V;33mΩ@10V |
| Pd - Power Dissipation | 45W;50W |
| Gate Threshold Voltage (Vgs(th)) | 1.7V;2.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 96pF;160pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.446nF;2.696nF |
| Gate Charge(Qg) | 22nC;25nC |
N-Channel+P-Channel Array 60V 18A 50W Surface Mount TO-252-4Dual