GOFORD · FETs & Power MOSFETs · MPN G18N20T
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| Gate Charge(Qg) | 31nC |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 18A |
| Output Capacitance(Coss) | 80pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 110W |
| RDS(on) | 160mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.12nF |
| Vgs | ±30V |
N-Channel 200V 18A 110W Through Hole TO-220