GOFORD G180P06K

GOFORD · FETs & Power MOSFETs · MPN G180P06K

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Specifications

Gate Charge(Qg)46nC
Drain to Source Voltage60V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)233pF
RDS(on)15.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.035nF
Vgs±20V

Technical details

P-Channel 60V 45A 100W Surface Mount TO-252

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