GOFORD · FETs & Power MOSFETs · MPN G180N06S2
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| RDS(on) | 16.5mΩ@10V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.33nF |
| Gate Charge(Qg) | 58nC |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
8A 16.5mΩ@10V 2W 1.5V 2 N-Channel SOP-8 FET, MOSFET Arrays RoHS