GOFORD · FETs & Power MOSFETs · MPN G180C06Y
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| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 107pF;236pF |
| Current - Continuous Drain(Id) | 50A;60A |
| Pd - Power Dissipation | 69W;115W |
| RDS(on) | 14mΩ@10V;19mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V;3V |
| Drain to Source Voltage | 60V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 106pF;234pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 2.429nF;4.471nF |
| Gate Charge(Qg) | 39nC;62nC |
1 N-Channel + 1 P-Channel TO-252-4 FET, MOSFET Arrays RoHS