GOFORD G170P06S

GOFORD · FETs & Power MOSFETs · MPN G170P06S

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Specifications

Gate Charge(Qg)75nC
Drain to Source Voltage60V
Output Capacitance(Coss)366pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)344pF
RDS(on)14mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.533nF
Vgs±20V

Technical details

P-Channel 60V 12A 3.6W Surface Mount SOP-8

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